sangdest microelectronics technical data green products data sheet n0769, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBR30200CT mbrb30200ct MBR30200CT-1 MBR30200CT /mbrb30200 ct /MBR30200CT-1 schottky rectifier applications: ? switching power supply ? converters ? free-wheeling diodes ? reverse battery protection features: ? 150 c t j operation ? center tap configuration ? low forward voltage drop ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? this is a pb ? free device ? all smc parts are traceable to the wafer lot ? additional testing can be offered upon request mechanical dimensions: in inches / mm to-220ab case styles MBR30200CT to-220ab mbrb30200ct d 2 pak MBR30200CT-1 to-262
sangdest microelectronics technical data green products data sheet n0769, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBR30200CT mbrb30200ct MBR30200CT-1 d 2 pak to-262 dimensions in millimeters symbol min. typical max. a 4.55 4.70 4.85 a1 0 0.10 0.25 a2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.27 c 0.36 0.38 0.61 c1 1.17 1.27 1.37 d 8.55 8.70 8.85 d1 6.40 e 10.01 10.16 10.31 e1 7.6 e2 9.98 10.08 10.18 e 2.54 h 14.6 15.1 15.6 l 2.00 2.30 2.70 l1 1.17 1.27 1.40 l2 2.20 l3 0.25bsc e 0 - 8 e1 5 e2 4 e3 4
sangdest microelectronics technical data green products data sheet n0769, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBR30200CT mbrb30200ct MBR30200CT-1 marking diagram: where xxxxx is yywwl mbr = device type b = package type 30 = forward current (30a) 200 = reverse voltage (200v) ct/ct-1 = configuration ssg = ssg yy = year ww = week l = lot number MBR30200CT mbrb30200ct cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping MBR30200CT to-220ab (pb-free) 50pcs / tube mbrb30200ct d 2 pak (pb-free) 800pcs / reel for information on tape and reel specifications, including part or ientation and tape sizes, please refer to our tape and reel p ackaging specification. maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 200 v max. average forward i f(av) 50% duty cycle @t c = 133c, rectangular wave form 30 a peak repetitive forward current(per leg) i frm rated v r square wave, 20khz t c = 133c 20 a max. peak one cycle non-repetitive surge current (per leg) i fsm surge applied at rated load conditions halfwave, single phase,60hz 150 a
sangdest microelectronics technical data green products data sheet n0769, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBR30200CT mbrb30200ct MBR30200CT-1 electrical characteristics: characteristics symbol condition max. units max. forward voltage drop (per leg) * v f1 @ 15 a, pulse, t j = 25 c 0.90 v v f2 @ 15 a, pulse, t j = 125 c 0.70 v max. reverse current (per leg) * i r1 @v r = rated v r t j = 25 c 1.0 ma i r2 @v r = rated v r t j = 125 c 6.0 ma max. junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz 400 pf typical series inductance (per leg) l s measured lead to lead 5 mm from package body 8.0 nh max. voltage rate of change dv/dt - 10,000 v/ s * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature t j - -55 to +150 c max. storage temperature t stg - -55 to +150 c maximum thermal resistance junction to case r jc dc operation 2.0 c/w maximum thermal resistance, case to heat sink r ja dc operation 50 c/w maximum thermal resistance, case to heat sink r cs mounting surface, smooth and greased 0.50 c/w approximate weight wt - 2 g case style to-220ab d 2 pak to-262
sangdest microelectronics technical data green products data sheet n0769, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBR30200CT mbrb30200ct MBR30200CT-1 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1 forward voltage drop (v) instantaneous forward current (a) 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage (%) instantaneous reverse current ( a) 10 100 1000 0 5 10 15 20 25 30 35 40 reverse voltage (v) junction capacitance (pf) fig.2-typical reverse characteristics fig.3-typical instantaneous forward voltage characteristics fig.1-typical junction capacitance tj=125 tj=25 tj=125 tj=25 tj=25
sangdest microelectronics technical data green products data sheet n0769, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MBR30200CT mbrb30200ct MBR30200CT-1 disclaimer: 1- the information given herein, including the specifications and dimensions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchasers are advised to contact the smc - sangdest microelectronics (nanjing) co., ltd sale s department for the latest version of the datasheet(s). 2- in cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensur ed by using semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement . 3- in no event shall smc - sangdest microelectronics (nanjing) co., ltd be liable for any damages that may result from an accid ent or any other cause during operation of the user?s units according to the datasheet(s). smc - sangdest microelectronics (nanjing) co., ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronics (nanjing) co., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or smc - sangdest microelectr onics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permissio n of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations..
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